Circuit for current sensing in high-voltage transistor

ABSTRACT

An integrated circuit including a high-voltage n-channel MOS power transistor, a high-voltage n-channel MOS blocking transistor, a high-voltage n-channel MOS reference transistor, and a voltage comparator, configured to provide an overcurrent signal if drain current through the power transistor in the on state exceeds a predetermined value. The power transistor source node is grounded. The blocking transistor drain node is connected to the power transistor drain node. The blocking transistor source node is coupled to the comparator non-inverting input. The reference transistor drain node is fed by a current source and is connected to the comparator inverting input. The reference transistor gate node is coupled to a gate node of the power transistor. The comparator output provides the overcurrent signal. A process of operating the integrated circuit is disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.13/554,846, filed on Jul. 20, 2014 (Now U.S. Pat. No. 8, 890, 579), andis related to patent application U.S. patent application Ser. No.13/554,863 (now U.S. Pat. No. 8,648,416), which is incorporated hereinby reference.

FIELD OF THE INVENTION

This invention relates to the field of integrated circuits. Moreparticularly, this invention relates to high-voltage transistors inintegrated circuits.

BACKGROUND OF THE INVENTION

An integrated circuit may contain a high-voltage n-channel metal oxidesemiconductor (MOS) power transistor which is configured to operate at adrain voltage which is significantly higher than an operating voltagefor other transistors and circuits in the integrated circuit. Forexample, an integrated circuit which contains transistors and circuitswhich operate at 10 volts or less may also include a high-voltagen-channel MOS power transistor which operates at a drain voltage of over300 volts and switches several amps. The body of the power transistormay be directly connected to the substrate of the integrated circuit,for example to provide a simpler fabrication process for the integratedcircuit, compared to an integrated circuit with a high-voltage powertransistor whose body is electrically isolated from the substrate. Itmay be desirable to determine if current through the power transistor isabove a certain value when the power transistor is in the on state,without increasing the fabrication complexity of the integrated circuitor unduly increasing the size of the integrated circuit.

SUMMARY OF THE INVENTION

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the invention. This summary isnot an extensive overview of the invention, and is neither intended toidentify key or critical elements of the invention, nor to delineate thescope thereof. Rather, the primary purpose of the summary is to presentsome concepts of the invention in a simplified form as a prelude to amore detailed description that is presented later.

An integrated circuit may include a high-voltage n-channel MOS powertransistor whose drain is operated at high voltage, a high-voltageisolated n-channel MOS blocking transistor, a high-voltage n-channel MOSreference transistor whose drain is operated at low voltage, and avoltage comparator, configured to provide an overcurrent signal if draincurrent through the power transistor in the on state exceeds apredetermined value. A drain node of the blocking transistor isconnected to a drain node of the power transistor. A source node of theblocking transistor is coupled to a non-inverting input of thecomparator. The blocking transistor is maintained in an off state whenthe power transistor is in an off state, so as to block high voltagefrom the comparator. A source node of the reference transistor isgrounded and a drain node of the reference transistor is fed by acurrent source so as to provide a desired voltage on the referencetransistor drain node when the reference transistor is in the on state.The reference transistor has the same layer structure as the powertransistor with a reduced channel width. A gate node of the referencetransistor is coupled to a gate node of the power transistor, so thatboth the power transistor and the reference transistor are turned offand on by a power transistor gate signal. The drain node of thereference transistor is connected to an inverting input of thecomparator. An output of the comparator provides the overcurrent signal.

DESCRIPTION OF THE VIEWS OF THE DRAWING

FIG. 1 is a circuit diagram of an integrated circuit according to anembodiment.

FIG. 2 is a flowchart of a process of operating the integrated circuitdescribed in reference to FIG. 1.

FIG. 3 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 1, in which a gate node of a blockingtransistor is controlled according to another embodiment.

FIG. 4 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 1, in which a drain potential at thepower transistor is reduced by a voltage divider to provide a lowerpotential at the non-inverting input of the comparator.

FIG. 5 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 4, depicting a particular embodiment ofthe voltage divider.

FIG. 6 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 5, depicting more specific embodiment ofthe voltage divider.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

The present invention is described with reference to the attachedfigures, wherein like reference numerals are used throughout the figuresto designate similar or equivalent elements. The figures are not drawnto scale and they are provided merely to illustrate the invention.Several aspects of the invention are described below with reference toexample applications for illustration. It should be understood thatnumerous specific details, relationships, and methods are set forth toprovide an understanding of the invention. One skilled in the relevantart, however, will readily recognize that the invention can be practicedwithout one or more of the specific details or with other methods. Inother instances, well-known structures or operations are not shown indetail to avoid obscuring the invention. The present invention is notlimited by the illustrated ordering of acts or events, as some acts mayoccur in different orders and/or concurrently with other acts or events.Furthermore, not all illustrated acts or events are required toimplement a methodology in accordance with the present invention.

An integrated circuit may include a high-voltage n-channel MOS powertransistor whose drain is operated at high voltage, a high-voltageisolated n-channel MOS blocking transistor, a high-voltage n-channel MOSreference transistor whose drain is operated at low voltage, and avoltage comparator, configured to provide an overcurrent signal if draincurrent through the power transistor in the on state exceeds apredetermined value. A drain node of the blocking transistor isconnected to a drain node of the power transistor. A source node of theblocking transistor is coupled to a non-inverting input of thecomparator. The blocking transistor is maintained in an off state whenthe power transistor is in an off state, so as to block high voltagefrom the comparator. The reference transistor has a same layer structureas the power transistor with a reduced channel width compared to thepower transistor. A source node of the reference transistor is groundedand a drain node of the reference transistor is fed by a current sourceso as to provide a desired voltage on the reference transistor drainnode when the reference transistor is in the on state. A gate node ofthe reference transistor is coupled to a gate node of the powertransistor, so that both the power transistor and the referencetransistor are turned off and on by a power transistor gate signal. Thedrain node of the reference transistor is connected to an invertinginput of the comparator. An output of the comparator provides theovercurrent signal.

FIG. 1 is a circuit diagram of an integrated circuit according to anembodiment. The integrated circuit 100 contains a high-voltage n-channelMOS power transistor 102, a high-voltage isolated n-channel MOS blockingtransistor 104, a high-voltage n-channel MOS reference transistor 106and a voltage comparator 108.

A drain node 112 of the power transistor 102 is connected to a highvoltage power node 136 labeled V_(HIGH VOLTAGE) in FIG. 1, for examplethrough an external pin of a package containing the integrated circuit100. A source node 114 of the power transistor 102 is directlyelectrically connected to an instance of a ground node 124 of theintegrated circuit 100. A gate node 130 of the power transistor 102 isconnected to a power switching signal source 138 labeled Φ_(DRIVE) inFIG. 1.

A drain node 110 of the blocking transistor 104 is connected to thedrain node 112 of the power transistor 102 and thus to the high voltagepower node 136. A source node 116 of the blocking transistor 104 iselectrically isolated from the integrated circuit ground node, and iscoupled to a non-inverting input 118 of the comparator 108. A gate node140 of the blocking transistor 104 is connected to a blocking switchingsignal source 142 labeled Φ_(BLOCK) in FIG. 1. The blocking switchingsignal source 142 is capable of switching to a blocking transistor offstate bias which puts the blocking transistor 104 in an off state biasso that current through the blocking transistor is limited to leakagecurrent, for example less than a microampere. The blocking switchingsignal source 142 is further capable of switching to a blockingtransistor on state bias which puts the blocking transistor 104 in an onstate so that the blocking transistor 104 operates in a linear mode inwhich an on-state drain-source resistance of is less than 1 kohm. In theinstant embodiment, the blocking transistor 104 is put in the on statewhen the blocking switching signal source Φ_(BLOCK) 142 is high.

The reference transistor 106 is formed concurrently with the powertransistor 102 and has a same layer structure as the power transistor106 with a reduced channel width; the reference transistor has a samedrain structure including any extended drain drift layers, a same gatelength and gate dielectric layer thickness, and a same threshold as thepower transistor 102. The channel width of the power transistor 102 iswide enough to pass a desired current level of at least 0.5 amperes andpossibly more than 2 amperes. The channel width of the referencetransistor 106 is less by a factor of, for example, 1000 to 5000, sothat an on-state resistance of the reference transistor 106 is higherthan an on-state resistance of the power transistor 102 by the samefactor. The reference transistor 106 is labeled M_(POWER)/N_(REFERENCE)in FIG. 1 and subsequent figures to emphasize the similarity in layerstructure and the channel width reduction fact with respect to the powertransistor 102. A drain node 122 of the reference transistor 106 isconnected to a reference current source 126 labeled I_(REFERENCE) inFIG. 1. A source node 120 of the reference transistor 106 may beconnected to an instance of the ground node 124. A gate node 128 of thereference transistor 106 is coupled to the gate node 130 of the powertransistor 102 and thus to the power switching signal source 138. Thereference transistor 106 is formed so that when the power switchingsignal source 138 provides an off state bias which is sufficient to putthe power transistor 102 into an off state, a potential on the referencetransistor gate node 128 is sufficient to put the reference transistor106 into an off state, and so that when the power switching signalsource 138 provides an on state bias which is sufficient to put thepower transistor 102 into an on state, the potential on the referencetransistor gate node 128 is sufficient to put the reference transistor106 into an on state. For example, the off state bias of the powerswitching signal source 138 may be substantially equal to a potential ofthe ground node 124 of the integrated circuit 100, and the on state biasmay be between 5 and 10 volts.

The reference transistor 106 is further formed so that the on-statedrain-source resistance of the reference transistor 106 is a desiredmultiple of the power transistor on-state drain-source resistance, forexample, a multiple 1000 to 5000. The reference current source 126provides a predetermined current so as to provide a desired potential onthe reference transistor drain node 120 when the reference transistor106 is in the on state. In the embodiment of FIG. 1, the desiredpotential on the reference transistor drain node 122 is equal to thepotential on the power transistor drain node 112 when a prescribedmaximum current is flowing through the power transistor 102. In oneversion of the instant embodiment, the desired potential on thereference transistor drain node 122 may be expressed by the relationshipV _(drain) =R _(power) ×I _(maxpower) =R _(reference) ×I _(reference)

where: V_(drain) is desired potential on the reference transistor drainnode (122),

R_(power) is the on-state resistance of the power transistor (102),

I_(maxpower) is the prescribed maximum current through the powertransistor (102),

R_(reference) is the on-state resistance of the reference transistor(106), and

I_(reference) is the predetermined current from the reference currentsource (126).

The potential on the reference transistor drain node 122 is applied tothe comparator inverting input 132 through the electrical connectionbetween the reference transistor drain node 122 and the comparatorinverting input 132.

The reference transistor drain node 122 is connected to an invertinginput 132 of the comparator 108. An output 134, labeled V_(OVERCURRENT)in FIG. 1, of the comparator 108 provides an overcurrent signal, forexample a predetermined voltage level, when a potential at thenon-inverting input 118 is higher than a potential at the invertinginput 132.

In one version of the integrated circuit 100, the power transistor 102and the blocking transistor 104 may be integrated as described in thecommonly assigned patent application having patent application Ser. No.13/554,863,filed simultaneously with this application and which isincorporated herein by reference but is not admitted to be prior artwith respect to the present invention by its mention in this section. Inanother version of the integrated circuit 100, the power transistor 102and the blocking transistor 104 may be spatially separated and functionindependently. In one version of the integrated circuit 100, theblocking transistor drain node 110 is electrically connected to thepower transistor drain node 112 in the integrated circuit 100, forexample by electrically wirebonding each high voltage drain to a samepin on the package of the integrated circuit 100 which provides the highvoltage to both drain nodes 110 and 112. In another version, theblocking transistor 104 may be integrated with the power transistor 102,so that silicon area of the integrated circuit 100 can be reduced byhaving a single wirebond connection to the external pin on the packagewhich provides the high voltage.

FIG. 2 is a flowchart of a process of operating the integrated circuitdescribed in reference to FIG. 1. The process begins with step 200 whichis to put the blocking transistor 104 into the off state. In theembodiment described in reference to FIG. 1, step 200 may be performedby switching the blocking switching signal source 142 to the blockingtransistor off state bias. In other embodiments, the blocking switchingsignal source 142 may be coupled to the blocking transistor gate node140 through additional circuitry so as to provide the blockingtransistor off state bias.

Subsequently, step 202 is executed, in which the power transistor 102and the reference transistor 106 are put in their respective off statesby applying the off state bias of the power switching signal source 138to the power transistor gate node 130 and the blocking transistor gatenode 140. When the power transistor 102 is in the off state, currentthrough the external load is limited to leakage current of the powertransistor 102, for example less than a microampere, so that the highvoltage appears at the blocking transistor drain node 110. When thepower transistor 102 is in the off state, the blocking transistor 104 ismaintained in the off state so as to block high voltage from thecomparator non-inverting input 118.

Subsequently, step 204 is executed, in which a high voltage, for exampleat least 300 volts and possibly no more than 1000 volts, is appliedthrough an external load, not shown, to the power transistor drain node112. The high voltage is also applied to the blocking transistor drainnode 110 through the electrical connection between the power transistordrain node 112 and the blocking transistor drain node 110.

Subsequently, step 206 is executed, in which the power transistor 102and the reference transistor 106 are put in their respective on statesby applying the on state bias of the power switching signal source 138to the power transistor gate node 130 and the reference transistor gatenode 128. An on-state drain-source resistance of the power transistor102 may be, for example, between 5 and 10 ohms. The high voltage throughthe external load may provide, for example up to 1 to 2 amps through thepower transistor 102, so that the power transistor drain node 112 is ata potential of, for example, 5 to 20 volts.

After the power transistor 102 is put into the on state, step 208 isexecuted in which the blocking switching signal source 142 is switchedto the blocking transistor on state bias which puts the blockingtransistor 104 in the on state so that the potential on the powertransistor drain node 112 is applied through the blocking transistor 104to the comparator non-inverting input 118. When the current through thepower transistor 102 exceeds the prescribed maximum current, thepotential at the comparator non-inverting input 108 will be higher thanthe potential at the comparator inverting input 132 and the overcurrentsignal will be provided at the comparator output 134.

Steps 200 through 208 may be repeated as needed to operate theintegrated circuit 100. For example, in an embodiment of FIG. 2 in whichthe integrated circuit 100 is switching current through a load connectedto the high voltage power node 136, steps 200 through 208 may berepeated each time the current is switched. A process of shutting downthe integrated circuit 100 may include steps 200 and 202.

Subsequently, optional step 210 is to monitor the comparator output 134to determine if the overcurrent signal is present. Appropriate actionmay be taken in the integrated circuit 100 or external to the integratedcircuit 100 when the overcurrent signal is detected. Optional step 210may be repeated as necessary for desired operation of the integratedcircuit 100.

FIG. 3 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 1, in which a gate node of a blockingtransistor is controlled according to another embodiment. The integratedcircuit 300 contains a power transistor 302 in parallel with a blockingtransistor 304, a reference transistor 306 in series with a referencecurrent source 308, and a comparator 310, configured as described inreference to FIG. 1. In the instant embodiment, the blocking transistoroff state bias and blocking transistor on state bias are applied to agate node 312 of the blocking transistor 304 by a series combination ofa blocking signal current source 314, labeled I_(BLOCK) in FIG. 3, and azener diode 316. An anode of the zener diode 316 is connected to asource node 318 of the blocking transistor 304 and a cathode of thezener diode 316 is connected to the blocking transistor gate node 312.The blocking signal current source 314 is switched on and off by ablocking switching signal source 320 labeled Φ_(BLOCK-BAR) in FIG. 3.The zener diode 316 is formed so that current from the blocking signalcurrent source 314 through the zener diode 316 generates a blockingtransistor on state bias at the blocking transistor gate node 312 whichputs the blocking transistor 304 in the on state. In the instantembodiment, the blocking transistor 304 is put in the on state when theblocking switching signal source Φ_(BLOCK-BAR) 320 is low. The zenerdiode 316 also protects the blocking transistor gate node 312 from toomuch voltage from the blocking signal current source 314.

FIG. 4 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 1, in which a drain potential at thepower transistor is reduced by a voltage divider to provide a lowerpotential at the non-inverting input of the comparator. The integratedcircuit 400 contains a power transistor 402 in parallel with a blockingtransistor 404, a reference transistor 406 in series with a referencecurrent source 408, and a comparator 410, configured as described inreference to FIG. 1. A voltage divider 412 is connected in seriesbetween a source node 414 of the blocking transistor 404 and thenon-inverting input 416 of the comparator 410. The voltage divider 412reduces the potential at the blocking transistor source node 414 by afactor of N_(divider), where N_(divider) is a positive number greaterthan 1, for example 5 to 20, and provides the reduced potential to thenon-inverting input 416 of the comparator 410. The embodiment of FIG. 4may advantageously allow use of lower voltage circuitry to form thecomparator. The reference current source 408 is formed so as to providean appropriately scaled current, so that a potential on a drain node 418of the reference transistor 406, and thus at the inverting input 420 ofthe comparator 410, matches the scaled voltage at the blockingtransistor source node 414 when the prescribed maximum current isflowing through the power transistor 402, as expressed by therelationship:R _(power) ×I _(maxpower) =N _(divider) ×R _(reference) ×I _(reference)

where: R_(power) is the on-state resistance of the power transistor(402),

I_(maxpower) is the prescribed maximum current through the powertransistor (402),

N_(divider) is dividing factor of the voltage divider (412),

R_(reference) is the on-state resistance of the reference transistor(406), and

I_(reference) is the predetermined current from the reference currentsource (408).

FIG. 5 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 4, depicting a particular embodiment ofthe voltage divider. The integrated circuit 500 contains a powertransistor 502 in parallel with a blocking transistor 504, a referencetransistor 506 in series with a reference current source 508, and acomparator 510, configured as described in reference to FIG. 1. Thevoltage divider 512 includes a buffer 514 in series with a resistordivider network 516 to ground. The buffer 514 provides a same potentialon a source node 518 of the blocking transistor 504 to a top of theresistor divider network 516. The resistor divider network 516 reducesthe potential at a top node top of the resistor divider network 516 by afactor of N_(divider), for example 5 to 20, and provides the reducedpotential to a non-inverting input 520 of the comparator 510.

FIG. 6 is a circuit diagram of an integrated circuit similar to thatdescribed in reference to FIG. 5, depicting more specific embodiment ofthe voltage divider. The integrated circuit 600 contains a powertransistor 602 in parallel with a blocking transistor 604, a referencetransistor 606 in series with a reference current source 608, and acomparator 610, configured as described in reference to FIG. 1. Thevoltage divider 612 includes a p-channel current mirror 614 in tandemwith an n-channel common gate differential transistor pair 616 connectedthrough a resistor divider network 618 to ground. The current mirror 614and differential transistor pair 616 form a buffer to provide a samepotential on a source node 620 of the blocking transistor 604 to a topof the resistor divider network 618. The resistor divider network 618reduces the potential at a top node top of the resistor divider network618 by a factor of N_(divider), for example 5 to 20, and provides thereduced potential to a non-inverting input 622 of the comparator 610.Forming the voltage divider 612 with the buffer of the current mirror614 and differential transistor pair 616 may advantageously provide ahigher speed of operation of the voltage divider 612 compared to voltagedividers with other circuit designs.

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only and not limitation. Numerous changes to the disclosedembodiments can be made in accordance with the disclosure herein withoutdeparting from the spirit or scope of the invention. Thus, the breadthand scope of the present invention should not be limited by any of theabove described embodiments. Rather, the scope of the invention shouldbe defined in accordance with the following claims and theirequivalents.

What is claimed is:
 1. A process of operating an integrated circuit froma first voltage, comprising the steps of: putting a n-channel MOSblocking transistor having an operating voltage higher than the firstvoltage into an off state utilizing a first gate signal, wherein asource node of said blocking transistor is electrically isolated from aground node of said integrated circuit; putting a n-channel MOS powertransistor having an operating voltage higher than the first voltageinto an off state utilizing a second gate signal distinct from the firstgate signal and a n-channel MOS reference transistor having an operatingvoltage higher than the first voltage into an off state utilizing thesecond gate signal, wherein: a drain node of said power transistor isconnected to a drain node of said blocking transistor; a source node ofsaid power transistor is directly electrically connected to an instanceof said ground node; a drain node of said reference transistor isconnected in series to a reference current source; and a gate node ofsaid power transistor is coupled to a gate node of said referencetransistor; applying a high voltage to said power transistor drain node;putting said power transistor into an on state and said referencetransistor into an on state; and putting said blocking transistor intoan on state, wherein: said drain node of said reference transistor isconnected to an inverting input of a comparator; and said source node ofsaid blocking transistor is coupled to a non-inverting input of saidcomparator.
 2. The process of claim 1, further including the step ofmonitoring an output of said comparator after said step of putting saidblocking transistor into said on state is performed, wherein saidcomparator output provides an overcurrent signal when a potential atsaid comparator non-inverting input is higher than a potential at saidcomparator inverting input.
 3. The process of claim 1, further includingrepeating said steps of: putting said high-voltage n-channel MOSblocking transistor into said off state; putting said high-voltagen-channel MOS power transistor into said off state and said high-voltagen-channel MOS reference transistor into said off state; applying saidhigh voltage to said power transistor drain node; putting said powertransistor into said on state and said reference transistor into said onstate; and putting said blocking transistor into said on state.
 4. Theprocess of claim 1, further including a step of shutting down saidintegrated circuit, by a process including repeating said steps of:putting said high-voltage n-channel MOS blocking transistor into saidoff state; and putting said high-voltage n-channel MOS power transistorinto said off state and said high-voltage n-channel MOS referencetransistor into said off state.
 5. The process of claim 1 wherein theoperating voltage of the MOS blocking transistor, the MOS powertransistor and the MOS reference transistor is at least substantially300 V.
 6. A method of detecting excess current in a power transistor onan integrated circuit operating from a first voltage, comprising thesteps of: placing a MOS blocking transistor having operating voltagehigher than the first voltage into an off state utilizing a first gatesignal, wherein a source node of said blocking transistor iselectrically isolated from a ground node of said integrated circuit;placing a MOS power transistor having a operating voltage greater thanthe first voltage into an off state utilizing a second gate signaldistinct from the first gate signal and a MOS reference transistorhaving operating voltage greater than the first voltage into an offstate utilizing the second gate signal, wherein: a first node of saidpower transistor is coupled to a drain node of said blocking transistor;a second node of said power transistor is electrically coupled to aninstance of said ground node; a node of said reference transistor iscoupled in series to a reference current source; and a gate node of saidpower transistor is coupled to a gate node of said reference transistor;applying a high voltage to said power transistor drain node; placingsaid power transistor into an on state and said reference transistorinto an on state; and placing said blocking transistor into an on state,wherein: said drain node of said reference transistor is connected to aninput of a comparator; and said source node of said blocking transistoris coupled to another input of said comparator, an output of thecomparator being indicative of excess current flowing through the powertransistor.
 7. The process of claim 6 wherein the operating voltage ofthe MOS blocking transistor, the MOS power transistor and the MOSreference transistor is at least substantially 300 V.